Menu
搜索
banner

产品

JR0105U

Silicon Carbide Schottky diode in a TO263 (D2PAK) plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits

· Highly stable switching performance · High forward surge capability IFSM · Extremely fast reverse recovery time · Superior in efficiency to Silicon Diode alternatives · Reduced losses in associated MOSFET · Reduced EMI · Reduced cooling requirements · RoHS compliant

Applications

· Power factor correction · Telecom / Server SMPS · UPS · PV inverter · PC Silverbox · LED / OLED TV · Motor Drives
产品编号
Parametrics
Package
Quality, reliability & chemical content
DataSheet
Product Name:
JR0105U
IT(RMS)(A):
1
PACKAGE:
TO-92
ITSM(A):
10
VDRM(V):
600
VRRM(V):
600
IGT(mA):
0.2
Tj(℃):
110
Equivalent P/N:
MCR100-6;BT169D;X00605MA
概要:

Silicon Carbide Schottky diode in a TO263 (D2PAK) plastic package, designed for high frequency switched-mode power supplies.

Features:

· Highly stable switching performance

· High forward surge capability IFSM

· Extremely fast reverse recovery time

· Superior in efficiency to Silicon Diode alternatives

· Reduced losses in associated MOSFET

· Reduced EMI

· Reduced cooling requirements

· RoHS compliant

Applications:

· Power factor correction

· Telecom / Server SMPS

· UPS

· PV inverter

· PC Silverbox

· LED / OLED TV

· Motor Drives

JR0105U

Symbol

Parameter

Conditions

Min

Max

Unit

VDRM

repetitive peak off-state voltage

 

600

 

V

VRRM

repetitive peak reverse voltage

 

600

 

V

IT(RMS)

RMS on-state current

Tc60

 

1

A

ITSM

non-repetitive peak on-state current

half sine waveTj(init) = 25 °Ctp = 10 ms

 

10

A

IGT

gate trigger current

VD =12VRL =33Ω

 

0.2

mA

IL

latching current

IG =1.2 IGT 

 

3

mA

IH

holding current

IT =0.05A  

 

2

mA

VTM

on-state voltage drop

ITM =1.6A tp=380μs

 

1.5

V

dv/dt

rate of rise of off-state voltage

VD =400VT j =125℃ RGK =1KΩ

20

 

V/μs

未找到相应参数组,请于后台属性模板中添加

 

 

 

 

 

JR0105U

Symbol

Parameter

Conditions

Min

Max

Unit

VDRM

repetitive peak off-state voltage

 

600

 

V

VRRM

repetitive peak reverse voltage

 

600

 

V

IT(RMS)

RMS on-state current

Tc60

 

1

A

ITSM

non-repetitive peak on-state current

half sine waveTj(init) = 25 °Ctp = 10 ms

 

10

A

IGT

gate trigger current

VD =12VRL =33Ω

 

0.2

mA

IL

latching current

IG =1.2 IGT 

 

3

mA

IH

holding current

IT =0.05A  

 

2

mA

VTM

on-state voltage drop

ITM =1.6A tp=380μs

 

1.5

V

dv/dt

rate of rise of off-state voltage

VD =400VT j =125℃ RGK =1KΩ

20

 

V/μs

3333

4444

上一个
下一个

股票简称(Stock Name):捷捷微电

股票代码(Stock Code):300623

全国统一热线

0513-68528666

地址:江苏省启东市经济开发区钱塘江路3000号

© 2020 江苏捷捷微电子股份有限公司  苏ICP备14001184号-1